The A-site ordered perovskite oxides with chemical formula AA03B4O12 display many intriguing physical properties due to the introduction of transition metals at
A reverse-conducting lateral insulated-gate bipolar transistor (RC-LIGBT) with a trench oxide layer (TOL), featuring a vertical N-buffer and P-collector is prop
In order to decrease the Schottky barrier height and sheet resistance between graphene (Gr) and the p-GaN layers in GaN-based light-emitting diodes (LEDs),some
The Ce-Co-doped BiFeO3 multiferroic,Bi1-xCexFe1-xCoxO3 (x =0.00,0.01,0.03,and 0.05),has been prepared by a sol-gel auto-combustion method and analyzed through R