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研制了一种36×36个单元电荷注入器件面阵固体摄像器。分析了几种提出信号的方法。由衬底提出信号时要求尽可能低的负载阻抗,否则在信号提出时会引起衬底电平更大的漂浮,从而引起整个阵列的电荷再分配。采用平行注入提出信号时,可以使信号电荷的探测和电荷注入两种功能分开,则衬底多数载流子的位移电流影响较少。用平行注入工作方式已摄出清晰的简单图像。图像是由示波器显示的。文中还叙述了该器件的制造工艺和今后的改进意见。电荷注入器件与电荷耦合器件相比,有结构机理简单、抗光晕效应好之优点。由于平行工作,可以允许少量的工艺缺陷;因为信号电荷只在光敏单元内转移一次读出后即注入衬底,故对电荷转移效率要求不高。因此它在低分辨率的红外固体摄像器件方面有较好的发展前景。但是电荷注入具有较高的输出电容,还需要在阵列周边作上MOSFET扫描电路,所以高分辨率的摄像器件受到一定的限制。
A 36 × 36 cell charge injection device has been developed. Several ways of signaling were analyzed. Requiring the lowest possible load impedance when the signal is being presented by the substrate would otherwise cause the substrate level to float more when the signal is presented, causing the charge redistribution across the array. When using parallel injection signal, the signal charge detection and charge injection can be separated from each other, and the displacement current of the majority carriers of the substrate has less influence. With parallel injection work has been clear and simple images. The image is displayed by the oscilloscope. The article also describes the manufacturing process of the device and future improvements. Compared with charge-coupled devices, charge-injection devices have the advantages of simple structure and anti-halo effect. Due to parallel work, a small number of process defects can be tolerated; as the signal charges are injected into the substrate only after being transferred once within the photosensitive cell, the charge transfer efficiency is less demanding. Therefore, it has a good development prospect in the low-resolution infrared solid-state imaging device. However, the charge injection has a higher output capacitance, but also need to make MOSFET scan circuit around the array, so high-resolution imaging device is subject to certain restrictions.