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室温下采用RF磁控溅射技术在石英衬底上制备了多晶ZnO:Al(AZO)透明导电薄膜,通过XRD,AFM,AES,Hall效应及透射光谱等测试研究了RF溅射功率、氩气压强对薄膜的结构、电学和光学性能的影响.分析表明:在最优条件下(溅射功率为250W,氩气压强为1.2Pa时),180nmAZO薄膜的电阻率为2.68×10-3Ω.cm,可见光区平均透射率为90%,适合作为发光二极管和太阳能电池的透明电极.所制备的AZO薄膜具有c轴择优取向,晶粒间界中的O原子吸附是限制薄膜电学性能的主要因素.
At room temperature, a polycrystalline ZnO: Al (AZO) transparent conductive thin film was prepared on a quartz substrate by RF magnetron sputtering. The RF sputtering power, argon The results show that the resistivity of 180nm AZO thin film is 2.68 × 10-3Ω under the optimal conditions (sputtering power of 250W, argon pressure of 1.2Pa). cm, the average transmittance in the visible region is 90%, which is suitable as a transparent electrode for LED and solar cell.The prepared AZO thin film has a preferred c-axis orientation and O atom adsorption in the grain boundary is the main factor that limits the electrical properties of the film .