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本文研究了当As~+通过SiO_2注入Si时,反冲注入高密度的氧在退火期间所引起的位锚网,以及位错网对As增强扩散的影响。给出了As增强扩散的分析模型,得到了用氧化层掩蔽作用获取浅的p-n结的条件,并给出了制备1000埃高浓度浅结的结果。
In this paper, we study the effect of bit-anchoring nets caused by high-density oxygen during the annealing process when As ~ + is implanted into Si via SiO_2 and the effect of dislocation meshes on the As diffusion. The analytical model of As enhancement diffusion was given. The conditions of obtaining shallow p-n junction with oxide masking were obtained. The results of preparing 1000 Å high concentration shallow junction were given.