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描述了一种基于 In P材料沿 [0 11]晶向湿法化学腐蚀形成平滑侧壁实现的 In P基多量子阱激光器和异质结双极晶体管驱动电路单片集成 .通过一个横向缓冲台面结构 ,降低了激光器阳极和晶体管集电极互连工艺的难度 ,改善了光发射单片光电集成电路的可制造性 .采用该方法制作的光发射单片直流功耗为 12 0 m W,在码长 2 2 3- 1传输速率 1.5 Gb/ s伪随机码信号调制下有清晰的眼图 ,光输出功率为 2 d Bm
An InP-based MQW laser and a heterojunction bipolar transistor driver circuit monolithically integrated by [012] crystal wet chemical etching to form a smooth sidewall based on InP material is described monolithically by a lateral buffer stage Structure and reduces the difficulty of interconnecting the anode of the laser and the collector of the transistor and improves the manufacturability of the light emitting monolithic optoelectronic integrated circuit.The light emitting monolithic DC power consumption produced by the method is 12 0 mW, Long 2 2 3 3- 1 Transmission rate 1.5 Gb / s Pseudo random code signal with clear eye pattern modulation, light output power of 2 d Bm