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本文研究了高光学通量密度条件下的n型Hg0.8Cd0.2Te(光导)探测器的性能。在10.6微米激光辐射下测量了探测器的光电导特性和响应时间,通量密度φ最高达10~(21)光子/厘米~2-秒(亦即大约40瓦/厘米~2),变化范围为四个数量级。在高通量下,光电导特性与入射通量成三次方变化,探测器响应时间随φ~(-2/3)变化。结论是:光电导特性的饱和是由于载流子寿命随载流子浓度缩短所造成。在高通量下,主要的复合机理为奥格复合。有证据证明在低通量下其它复合过程也可能是重要的。
In this paper, the performance of the n-type Hg0.8Cd0.2Te (light guide) detector under high optical fluence was investigated. The photoconductive properties and response time of the detector were measured at a laser beam of 10.6 micrometers with a flux density of up to 10-21 photons / cm2 to 2 seconds (ie, about 40 W / cm2), the range of variation For four orders of magnitude. Under high flux, the photoconductivity and the incident flux change cubicly, and the detector response time changes with φ ~ (-2/3). The conclusion is: the saturation of the photoconductivity is due to the carrier lifetime is shortened with the carrier concentration. At high throughput, the main composite mechanism is Ogg composite. There is evidence that other recombination processes may also be important at low throughputs.