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ZnS:Mn交流薄膜电致发光(ACTEL)中存在固有存贮效应和很长的使用寿命大大大推动了对这种器件的研究。 我们最近进行了ZnS:Mn薄膜存贮器件的场致发光实验,所用的薄膜结构是～5000厚的ZnS:Mn两边分别夹以～2500厚的非晶BaTiO_3绝缘层,再用InSnOx和Al电极完成装置。图1是我们在ZnS:Mn/a—BaTiO_3ACTEL器件上观察到的亮度—电压特性曲线。 我们观察到在这种器件的电致发光中包含两种成分,一种是空间均匀的发光,即本底发光;另一种是来自直经小于～1微米的定域亮区之发光。在存贮器件的正常工作电压范围内光辐射主要来自定域亮区[图2(a)]。当外加方波电压振幅增加时,这
The inherent storage effect and long service life of ZnS: Mn AC thin film electroluminescence (ACTEL) has greatly promoted the research of this kind of device. We recently performed an electroluminescence experiment of a ZnS: Mn thin film memory device using a thin film structure of -5000 thick ZnS: Mn sandwiched between two thousandths of an amorphous BaTiO_3 insulating layer, respectively, and then completed with InSnOx and Al electrodes Device. Figure 1 shows the brightness-voltage characteristics observed for our ZnS: Mn / a-BaTiO_3ACTEL device. We have observed that the electroluminescence of this device contains two components, one is spatially uniform luminescence, the background luminescence; and the other is luminescence from localized luminosity less than ~1 micron. In the normal working voltage range of the storage device, the light radiation mainly comes from the localized bright area [Fig. 2 (a)]. When applied square wave voltage amplitude increases, this