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结合我们近年来在掺稀土硅基材料和Ⅲ Ⅴ族化合物半导体材料的发光研究,简述目前国际上在这方面研究的新进展。重点介绍掺铒硅基发光和掺稀土GaN发光材料和器件的研究结果。
Combined with our recent research on luminescence of rare earth-doped silicon-based materials and III-V compound semiconductor materials, the recent advances in this field are summarized. The results of research on erbium-doped silicon-based luminescent and rare-earth-doped GaN phosphors and devices are mainly described.