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本文论述了采用最优化计算方法提取集成双极晶体管模型参数的原理及其过程。重点在求解非线性目标函数和梯度的方法。求解非线性目标函数采用了改进的N-R方法和终值传递方法,不仅使目标函数求解的收敛性得到了保证,而且使迭代次数大为减少。对梯度的求解采用了伴随网络法,可以一次性将目标函数对每个参数的梯度求出。文章比较了改进的方法和原始N-R方法,说明了改进方法的优点。最后给出了晶体管实测结果与理论计算结果,说明本文使用方法的可行性。
This article discusses the principle and process of using optimized computational methods to extract integrated bipolar transistor model parameters. The emphasis is on methods for solving nonlinear objective functions and gradients. The improved N-R method and the final value transfer method are adopted to solve the nonlinear objective function, which not only guarantees the convergence of the objective function, but also greatly reduces the number of iterations. The gradient is solved using the concomitant network method, and the gradient of the objective function to each parameter can be found all at once. The article compares the improved method and the original N-R method, and illustrates the advantages of the improved method. Finally, the measured results of the transistor and the theoretical calculation results are given to illustrate the feasibility of the method used in this paper.