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用sol-gel法先后分别在ITO/石英衬底上制备了Ti O2缓冲层和Bi4Ti3O12铁电薄膜层。研究了Ti O2缓冲层对BIT铁电薄膜结构和铁电性能的影响。结果表明:Ti O2层加入后BIT薄膜呈现出(117)择优取向,降低了BIT薄膜成核所需要的能量,促进了晶粒的生长,使得薄膜更加致密。当ITO基底与BIT薄膜之间加入40nm厚的Ti O2层,能够得到26.99μC/cm2的剩余极化值。
The Ti O2 buffer layer and the Bi4Ti3O12 ferroelectric thin film layer were respectively prepared on the ITO / quartz substrate by sol-gel method. The effect of Ti O2 buffer layer on the structure and ferroelectric properties of BIT ferroelectric thin films was investigated. The results show that the BIT films exhibit the preferential orientation of (117) after the Ti O2 layer is added, which reduces the energy required for the nucleation of the BIT films and promotes the growth of the grains, resulting in denser films. When the 40 nm thick Ti O2 layer was added between the ITO substrate and the BIT thin film, a residual polarization of 26.99 μC / cm2 was obtained.