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用脉冲激光沉积法分别在不同电阻率的p型和n型S(i100)衬底上制备了不掺杂ZnO薄膜,相应制成n-ZnO/p-Si和n-ZnO/n-Si异质结器件。利用X射线衍射和原子力显微镜对ZnO薄膜进行的结构和形貌测试表明,薄膜结晶情况良好,具有高度的c轴择优取向,表面颗粒大小、分布均匀。对器件的I-V特性测试表明,在无光条件下,制备的n-ZnO/p-Si异质结漏电流很低,而n-ZnO/n-Si同型异质结漏电流要稍大一些;随衬底电阻率的增大,上述器件的阈值电压变小;器件在光照下的漏电流明显比无光条件下的要大。
The undoped ZnO thin films were deposited on p-type and n-type S (i100) substrates with different resistivities by pulsed laser deposition, and the n-ZnO / p-Si and n-ZnO / n- Qualitative junction device. The structure and morphology of ZnO thin films were characterized by X-ray diffraction and atomic force microscopy. The results show that the films have good crystallinity and high c-axis preferred orientation with uniform particle size and distribution. The IV characteristics of the devices showed that the leakage current of n-ZnO / p-Si heterojunction was very low and the n-ZnO / n-Si heterojunction current was slightly larger in the absence of light. With the increase of the substrate resistivity, the threshold voltage of the above devices becomes smaller; the leakage current under the illumination of the device is obviously larger than that under no light condition.