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采用新型双空穴注入层N,N,N′,N′-tetrakis(4-Methoxy-phenyl)benzidine/Copper phthalocyanine(MeO-TPD/CuPc)及器件结构:ITO/MeO-TPD(15nm)/CuPc(15nm)/N,N′-Bis(naphthalen-1-yl)-N,N′-bis(phenyl)benzidine(NPB,15nm)/8-hydroxyquinoline(Alq3,50nm)/LiF(1nm)/Al(120nm),研制出高效有机发光二极管(器件D),与其他器件(器件A,没有空穴注入层的器件;器件B,MeO-TPD单空穴注入层;器件C,CuPc单空穴注入层)相比,其性能得到明显改善.器件D的起亮电压降至3.2V,比器件A,B,C的起亮电压分别降低了2,0.3,0.1V.器件D在10V时,其最大亮度为23893cd/m2,最大功率效率为1.91lm/W,与器件A,B,C的最大功率效率相比,分别提高了43%(1.34lm/W),22%(1.57lm/W),7%(1.79lm/W).性能改善的主要原因是由于空穴注入和传输性能得到了改善,通过单空穴型器件的J-V曲线对这一现象进行了分析.
A new type of double hole injection layer was fabricated by using N, N, N’-tetrakis (4-Methoxy-phenyl) benzidine / Copper phthalocyanine (MeO-TPD / CuPc) and device structure of ITO / MeO-TPD (15 nm) / N, N’-Bis (naphthalen-1 -yl) -N, N’-bis (phenyl) benzidine (NPB, 15 nm) / 8-hydroxyquinoline (Alq3, 50 nm) / LiF (Device A, device without hole injection layer; Device B, MeO-TPD single hole injection layer; Device C, CuPc single hole injection layer , The performance of the device is significantly improved.The starting voltage of device D is reduced to 3.2V, which is 2, 3 and 0.1V lower than that of device A, B and C. The maximum of device D at 10V The brightness is 23893cd / m2, the maximum power efficiency is 1.91lm / W, which is 43% (1.34lm / W) and 22% (1.57lm / W) higher than the maximum power efficiency of devices A, 7% (1.79lm / W). The main reason for the performance improvement is due to the improved hole injection and transmission performance, this phenomenon was analyzed by the JV curve of the single-hole type device.