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全球 IC 发展趋势近年来 IC 的发展呈现如下几个趋势。其一,集成度提高半导体工艺、材料、技术水平的不断提高,在器件上得到的体现首先是集成度的提高,即在单位面积的晶园片上可以制作更多的器件单元。工艺上代表集成度水平的是光刻线条的宽度,1970年是10μm,1985年是1μm,1995年是0.3μm,2000年已达到0.1μm,但就发展的趋势来看似乎还没有达到物理极限。最能体现高集成度的典型器件是 DRAM,1970年 DRAM的集成度为1kb,1980年为64kb,1995年为64Mb,2000年达到1Gb。其二,运行速度加快
Global IC Development Trend In recent years, the development of IC presents the following trends. First, improve the integration Semiconductor technology, materials, technology continues to improve, the device is reflected in the first level of integration is improved, that is, the unit area of the wafer can be made more unit cell. The breadth of the lithography line, which represents the level of integration in the process, was 10 μm in 1970, 1 μm in 1985, 0.3 μm in 1995 and 0.1 μm in 2000, but it seems that the physical limit has not yet been reached in terms of the development trend . The most typical device that best reflects the high level of integration is DRAM. The DRAM integration was 1kb in 1970, 64kb in 1980, 64Mb in 1995 and 1Gb in 2000. Second, speed up