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本文报道了薄膜ＳＩＭＯＸ／ＳＯＩ材料上全耗尽ＭＯＳＦＥＴ的制备情况，并对不同硅膜厚度和不同背面栅压下的器件特性进行了分析和比较．实验结果表明，全耗尽器件完全消除了＂Ｋｉｎｋ＂效应，低场电子迁移率典型值为６２０ｃｍ２／Ｖ·ｓ，空穴迁移率为２１０ｃｍ２／Ｖ·ｓ，泄漏电流低于１０－１２Ａ；随着硅膜厚度的减簿，器件的驱动电流明显增加，亚阈值特性得到改善；全耗尽器件正、背栅之间有强烈的耦合作用，背表面状况可以对器件特性产生明显影响．该工作为以后薄膜全耗尽ＳＩＭＯＸ／ＳＯＩ电路的研制与分析奠定了基础．
This paper reports the preparation of fully depleted MOSFETs on thin film SIMOX / SOI materials, and analyzes and compares device characteristics at different silicon film thicknesses and back gate voltages. The experimental results show that the fully depleted device completely eliminates the “Kink” effect. The low field electron mobility is 620cm2 / V · s, the hole mobility is 210cm2 / V · s and the leakage current is less than 10-12A. With the thinning of the silicon film thickness, the driving current of the device is significantly increased, and the subthreshold characteristics are improved. The coupling between the positive depletion and the back gate of the fully depleted device has a strong coupling effect, and the back surface condition can significantly affect the device characteristics. This work lays the foundation for the development and analysis of the SIMOX / SOI circuit after the thin film is fully depleted.