离子刻蚀技术

• 作 者: 花泽国雄 王森英
• 出 处: 压电与声光
• 发表日期: 1979年03期
• 关键词: 离子刻蚀 抗蚀剂 刻蚀法 加工工艺 图形的 图形尺寸 进展状况 加工技术 钻蚀 掩膜

在研究抗蚀剂上形成微细图形的刻蚀技术的同时,对真实地复印出所形成微细图形的加工技术进行了研究.其中利用了加速离子的直进性的离于刻蚀法,作为Si片加工工艺全干式化最有希望的方法,此技术正在进行广泛地研究.本文研究了利用离子的直进性和反应性沿单向刻蚀基片的反应离子刻蚀法,并叙述了最近的进展状况和存在的问题.

In the course of studying the etching technique for forming a fine pattern on a resist, a processing technique for actually copying a formed fine pattern has been studied, in which a lift-off etching for accelerating ions is used as a Si wafer Processing technology is the most promising method of dry-type, this technology is widely studied.In this paper, the use of ions straightforward and reactivity along the unidirectional etching substrate reactive ion etching method, and described the recent The progress of the situation and the existing problems.