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采用射频磁控溅射法在Pt/TiO2/SiO2/Si(100)衬底上制备了Ba0.7Sr0.3TiO3薄膜,研究了工作气压、衬底温度等溅射参数对Ba0 .7Sr0.3Ti O3薄膜结构和电学性质的影响。使用XRD分析了工作气压为2Pa、衬底温度分别为200 ℃、400 ℃、600 ℃(组a) ,以及衬底温度为600 ℃、工作气压分别为1.5Pa、2.0Pa、2.5Pa、3.0Pa和5 .0Pa (组b)两组薄膜的微结构,结果表明工作气压在2.5Pa以下、衬底温度为600℃时沉积的薄膜具有较好的钙钛矿结构。在1.5Pa条件下溅射的薄膜具有明显的(111)择优取向。在2.5Pa时,Pt/Ba0.7Sr0.3TiO3/Pt电容有最优铁电性能,在外加4 V电压(电场为80 kV/cm)下,剩余极化(Pr)和矫顽场(Ec)分别为2.32μC/cm2、21.1 kV/cm。
Ba0.7Sr0.3TiO3 thin films were prepared on a Pt / TiO2 / SiO2 / Si (100) substrate by RF magnetron sputtering. The effects of sputtering pressure, substrate temperature and other sputtering parameters on the Ba0.7Sr0.3TiO3 thin films Structure and electrical properties of the impact. The working pressure was 2Pa, the substrate temperatures were 200 ℃, 400 ℃ and 600 ℃ respectively (group a) and the substrate temperature was 600 ℃. The operating pressures were 1.5Pa, 2.0Pa, 2.5Pa and 3.0Pa And 5.0Pa (group b). The results show that the films deposited at 600 ℃ have a better perovskite structure under the working pressure of 2.5Pa. Films sputtered at 1.5 Pa have a distinct (111) preferred orientation. The Pt / Ba0.7Sr0.3TiO3 / Pt capacitor has the best ferroelectric performance at 2.5 Pa. The remanent polarization (Pr) and the coercive field (Ec) under the applied voltage of 4 V (electric field of 80 kV / Respectively, 2.32μC / cm2, 21.1 kV / cm.