,Physical simulations and experimental results of 4H-SiC MESFETs on high purity semi-insulating subs

• 作 者: Chen Cang Bai Song Li Zhe-Yang Wu Peng Chen Zheng Han Pin
• 机 构: Jiangsu Provincial Key Lab of Advanced Photonic and Electronic Materials, Department of Physics, Nan
• 出 处: 中国物理B（英文版）
• 发表日期: 2009年10期
• 关键词: 4H-SiC MESFET simulation microwave

In this paper we report on DC and RF simulations and experimental results of 4H-SiC metal semiconductorfield effect transistors(MESFETs)on high purity semi-insulating substrates.DC and small-signal measurements arecompared with simulations.We design our device process to fabricate n-channel 4H-SiC MESFETs with 100 μm gateperiphery.At 30 V drain voltage,the maximum current density is 440 mA/mm and the maximum transconductance is33 mS/mm.For the continuous wave(CW)at a frequency of 2 GHz,the maximum output power density is measuredto be 6.6 W/mm,with a gain of 12 dB and power-added efficiency of 33.7%.The cut-off frequency(fT)and themaximum frequency(fmax)are 9 GHz and 24.9 GHz respectively.The simulation results of,T and fmax are 11.4 GHzand 38.6 GHZ respectively.