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ｃ轴取向的ＡｌＮ 具有优异的压电性和声表面波传输特性，已受到人们日益广泛的重视。文章报道了采用ＫｒＦ脉冲准分子激光沉积工艺，在Ｓｉ（１００）衬底上成功地制备了ｃ轴取向的ＡｌＮ晶态薄膜。Ｘ射线衍射与傅里叶变换红外光谱的结果表明，在３００ °Ｃ～８００ °Ｃ衬底温度下，薄膜均只有（００２）一个衍射峰，但随着温度的升高，薄膜的结晶质量变好；原子力显微镜对８００ °Ｃ沉积薄膜观察结果显示，薄膜具有高度一致的柱状结构，平均晶粒大小为２５０ ｎｍ 。
The c-axis oriented AlN has excellent piezoelectricity and surface acoustic wave transmission characteristics and has drawn increasing attention by people. The article reports the successful preparation of c-axis oriented AlN crystalline thin films on Si (100) substrates by KrF pulse excimer laser deposition. X-ray diffraction and Fourier transform infrared spectroscopy results show that the film has only (002) a diffraction peak at 300 ° C ~ 800 ° C substrate temperature, but as the temperature increases, the crystalline quality of the film changes Good; Atomic Force Microscopy of the deposited film at 800 ° C The results show that the film has a highly consistent columnar structure, the average grain size of 250 nm.