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同质MOVPE生长的极高光学质量的GaN显示出束缚激子光致发光峰值线宽仅为95︼eV,这几乎比报道的MOVPE生长的异质外延GaN(蓝宝石上横向外延过生长)最佳值窄一个数量级。研究中所用的衬底是在高氮压和高温条件下利用溶解于镓熔体的原子氮生产的,得到了面积为100mm2的GaN平板。为了
The very high-quality GaN grown by homogeneous MOVPE showed a peak linewidth of bound excitons photoluminescence of only 95 ︼ eV, which is almost better than the reported MOVPE-grown heteroepitaxial GaN (lateral epitaxial growth over sapphire) Narrow value of an order of magnitude. The substrate used in the study was produced using atomic nitrogen dissolved in gallium melt under high nitrogen pressure and high temperature to obtain a GaN plate having an area of 100 mm2. in order to