论文部分内容阅读
用离子束增强沉积技术合成了氮化硅薄膜并研究了薄膜的组分、性能和结构.结果表明,离子束增强沉积生长的氮化硅薄膜的组分比,可借助于调节氮离子和硅原子到达率之比加以控制.在合适条件下生长的氮化硅薄膜,其红外吸收特征峰在波数为840cm~(-1)附近,光折射率在2.2到2.6之间,其组分为Si_3N_4用RBS、AES、TEM、SEM、ED及扩展电阻,测量和观察生成的氮化硅薄膜的组分深度分布及结构.发现,离子束增强沉积制备的氮化硅薄膜,存在着表面富硅层、氮化硅沉积层及混合过渡层这样的多层结构.薄膜呈球状或方块状堆积.基本上是无定形相,但局部可观察到单晶相的存在.离子束增强沉积制备的氮化硅薄膜中的含氧量比不用离子束辅助沉积的显著减少.
Silicon nitride films were synthesized by ion beam enhanced deposition technique and the composition, properties and structure of the films were studied.The results show that the composition ratio of silicon nitride films grown by ion beam can be enhanced by adjusting the content of nitrogen ions and silicon The ratio of the arrival rate of atoms is controlled.The silicon nitride film grown under the proper conditions has an infrared absorption peak near the wave number of 840cm -1 and a light refractive index of 2.2 to 2.6 with a composition of Si_3N_4 The composition distribution and structure of the as-grown silicon nitride films were measured and observed by RBS, AES, TEM, SEM, ED and extended resistance.It was found that the silicon nitride films prepared by ion beam enhanced deposition have the surface silicon-rich layer , A silicon nitride deposition layer, and a hybrid transition layer. The film is spherical or cuboidal, substantially amorphous, but locally observable in the presence of a single crystal phase. The ion beam enhances the deposition of nitrogen The oxygen content in the silicon thin films is significantly reduced compared to ion beam assisted deposition.