论文部分内容阅读
用热氧化的方法在Ｓｉ片上制备了不同厚度的ＳｉＯ２薄膜，把能量１００ｋｅＶ和１８０ｋｅＶ的７５Ａｓ离子分别注入上述衬底，用２．１ＭｅＶ的４Ｈｅ离子对注入后的样品作了背散射分析，测出了７５Ａｓ在样品中的射程分布．将实验测出的射程参数与ＴＲＩＭ９０程序预言的结果作了比较，结果表明，实验测量的Ｒｅｘｐｐ与ＴＲＩＭ９０程序计算的Ｒｃａｌｐ值符合得很好，而ΔＲｐ的值符合较差，ΔＲｅｘｐｐ普遍大于ΔＲｃａｌｐ．上述现象产生的原因可能是在注入过程中Ａｓ原子发生了辐射增强扩散
SiO2 thin films with different thickness were prepared by thermal oxidation on Si wafer. The 75As ions with energy of 100keV and 180keV were implanted into the above substrates, respectively. Backscattering analysis was performed on the implanted samples with 2.1MeV of 4He ions. 75As in the sample range distribution. The experimentally measured range parameters are compared with those predicted by the TRIM90 program. The results show that the experimental measured Rexpp is in good agreement with the Rcalp value calculated by the TRIM90 program, while the ΔRp value is in good agreement with the ΔRexpp value being generally greater than ΔRcalp. The reason for the above phenomenon may be due to the enhanced diffusion of As atoms during implantation