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引言砷化镓金属半导体场效应晶体管(MESFET)比双极晶体管噪声低,增益高,适用于高至20千兆赫左右频率下的低噪声前置放大器。金属半导体场效应晶体管的特性金属半导体场效应晶体管由高阻衬底上的薄导电层构成。N 型导电层包括源和漏两个欧姆接触以及栅的整流接触。图1示出的砷化镓金属半导体场效应晶体管中,1×200微米的栅
Introduction Gallium arsenide metal-semiconductor field-effect transistors (MESFETs) have lower noise and higher gain than bipolar transistors and are suitable for low noise preamplifiers at frequencies up to about 20 GHz. Metal-Semiconductor Field-Effect Transistor Features Metal-semiconductor field-effect transistors consist of a thin conductive layer on a high-resistance substrate. The N-type conductive layer includes two ohmic contacts for the source and drain and a rectifying contact for the gate. Figure 1 shows a gallium arsenide metal semiconductor field-effect transistor, a 1 × 200 micron gate