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利用溅射淀积技术直接得到可用于显示器件的透明导体和光导体薄膜。这些器件主要是以铁电陶瓷板或液晶层作为控制介质的光阀结构。淀积技术可以改进,以淀积在包括热敏材料在内的各种基片上。 溅射淀积的透明电极In_(2-x)Sn_xO_(3-y)(ITO)已被淀积在PLZT(锆钛酸铅镧)铁电陶瓷,玻璃和其他基片材料上。ITO薄膜具有极好的附着力,很坚固,而又易于抛光和刻蚀。对可见光透射很好,近红外的吸收由电导率控制。电阻率为3×10~(-4)Ω.cm的薄膜通常注积在热稳定的基片上,而电阻率为10~(-3)Ω.cm的薄膜很容易在热敏基片上得到。 溅射淀积的CdS在Ar莱塞的514.5nm谱线附近有光敏峰,其光导增益为4×10~3,唁电阻率大于10~7Ω.cm。类似的溅射淀积技术也用于制作以Cd_(1-x)Zn_xS为光导体的器件。Cd_(1-x)Zn_xS的组分是变化的,使薄膜的灵敏度峰值在400至500mm之间与莱塞辐射相配合。这些薄膜没有CdS那样的光敏性,但它们可以透过更多的可见光,对投射光源很不灵敏,所以可用于同时读出——写入系统,也能用于实时显示系统。Cd_(1-x)ZnS的暗电阻率决定于组分,但所有薄膜都超过10~(12)Ω.cm。
Transparent conductors and photoconductor films that can be used for display devices are directly obtained by sputtering deposition technology. These devices are based on ferroelectric ceramic plates or liquid crystal layer as a control medium light valve structure. Deposition techniques can be improved to deposit on a variety of substrates, including thermal-sensitive materials. The sputter-deposited transparent electrode In_ (2-x) Sn_xO_ (3-y) (ITO) has been deposited on PLZT (lead lanthanum lead zirconate titanate) ferroelectric ceramics, glass and other substrate materials. ITO film has excellent adhesion, is very strong, but also easy to polish and etch. Very good transmission of visible light, near infrared absorption controlled by the conductivity. Films having a resistivity of 3 x 10 ~ (-4) Ω · cm are usually deposited on a heat-stable substrate, and films having a resistivity of 10 -3 Ω · cm are easily obtained on a heat-sensitive substrate. The sputtered CdS has a photoluminescence peak near the 514.5 nm line of Arlesset with a photoconductive gain of 4 × 10 -3 and a resistivity of greater than 10~7 Ω · cm. A similar sputter deposition technique was also used to fabricate Cd (l-x) ZnxS as a photoconductor device. The composition of Cd_ (1-x) Zn_xS is varied such that the peak sensitivity of the film is in the range of 400 to 500 mm with Lebestering. These films are less photo-sensitive than CdS, but they transmit more visible light and are less sensitive to projection light sources, making them suitable for both read-write and real-time display systems. The dark resistivity of Cd_ (1-x) ZnS depends on the composition, but all films exceed 10 ~ (12) Ω.cm.