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一、前言在半导体工业中,腐蚀技术除作为半导体表面清洁处理外,也作为无损伤加工的手段而得到广泛应用。在这种情况下,为改善器件制备的成品率,有必要精确控制腐蚀量。在 GaAs超高频二极管制备工艺中包含着大量的腐蚀。用于 GaAs 镜面抛光的主要腐蚀液,可举出H_2SO_4+H_2O_2系、CH_3OH+Br_2系、NaCIO、NaOH+H_2O_2系、HNO_3+HF 系等。共中 NaOH+H_2O_2系溶解反应是最援过程,其余按照腐触液的成分,有时反应最缓,有时溶液中溶质的扩散是最缓过程。
I. INTRODUCTION In the semiconductor industry, corrosion technology is widely used as a means of non-destructive processing in addition to semiconductor surface cleaning. In this case, it is necessary to precisely control the amount of corrosion in order to improve the yield of device fabrication. GaAs UHF diodes in the preparation process contains a lot of corrosion. The main etching solution used for the GaAs mirror polishing includes H 2 SO 4 + H 2 O 2 series, CH 3 OH + Br 2 series, NaCIO, NaOH + H 2 O 2 series, HNO 3 + HF series and the like. The total reaction of NaOH + H 2 O 2 system is the most aid the dissolution process, the rest in accordance with the composition of the corrosive liquid, and sometimes the slowest response, and sometimes solute diffusion in solution is the slowest process.