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本工作利用磁控溅射技术在石英衬底上生长出沿c轴择优取向的未掺杂ZnO薄膜,利用X射线衍射,光致发光,X射线光电子谱和Hall效应测量技术,研究了退火温度对结构、电学和光学性质的影响.发现真空退火可以提高ZnO的晶体和光学质量.生长的ZnO薄膜呈绝缘性质,经真空退火后变成导体,且导电类型和电性随退火温度而改变,并经590℃退火后获得p型ZnO.本文对退火影响ZnO结构、电学和光学性能的物理机制进行了讨论.
In this work, an undoped ZnO thin film with a preferred orientation along the c-axis was grown on a quartz substrate by magnetron sputtering. X-ray diffraction, photoluminescence, X-ray photoelectron spectroscopy and Hall effect measurement were used to study the effects of annealing temperature The results show that the vacuum annealing can improve the crystal and optical quality of ZnO.The grown ZnO thin film is of insulating property and becomes a conductor after vacuum annealing, and the conductivity type and electrical property change with the annealing temperature, And annealed at 590 ℃ to obtain p-type ZnO.In this paper, the physical mechanism of annealing affecting the structure, electrical and optical properties of ZnO was discussed.