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采用单质Ｆｅ、Ｎｄ、Ｂ组成的靶，用对向靶溅射系统制备出了含有Ｎｄ２Ｆｅ１４Ｂ相的薄膜。发现Ｎｄ２Ｆｅ１４Ｂ相能够较好地形成的基板温度范围是５００℃～６００℃。并且相对于热氧化硅基板（ＳｉＯ２／Ｓｉ），Ｎｄ２Ｆｅ１４Ｂ相能够较好地在Ｔａ基板上形成
Using single target of Fe, Nd and B, the film containing Nd2Fe14B phase was prepared by using the target sputtering system. The substrate temperature at which Nd2Fe14B phase was found to be well formed was found to range from 500 ° C to 600 ° C. And the Nd2Fe14B phase can be formed better on the Ta substrate with respect to the thermally-oxidized silicon substrate (SiO2 / Si)