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本文提出一种利用双极晶体管(BJT)静态和动态参数相关性,准确提取器件动态模型参数的新方法,并验证了该方法的可行性和实用性。
In this paper, we propose a new method to accurately extract the dynamic model parameters of a device by using the static and dynamic parameters of the bipolar transistor (BJT). The feasibility and practicability of the proposed method are verified.