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弗里曼离子源至今已有30多年的历史,仍然是适用面最广、用得最多的一种离子源。由于它能够对大多数元素产生聚焦得很小、束流达毫安级的离子束,而且具有较宽的能量范围,因而成为人们普遍选用的一种离子源。就半导体离子注入的应用来说,该源具有性能好和操作简单等特点,因而被广泛地用作硅器件的掺杂。几十年来弗里曼离子源已成功地应用在离子注入机领域的许多方面,其中包括束流为毫安级的多种金属离子束的常规生产。本文将详细讨论离子束的产生方法,对灯丝寿命和离子源研究的最新进展及今后展望等也分别作了介绍。
Freeman ion source has been more than 30 years of history, is still the most widely applicable, most used ion source. Due to its ability to focus most elements on small, beam-beam milliampere levels of ion beams, and has a wide range of energies, it has become a popular source of ions. For semiconductor ion implantation applications, the source has the characteristics of good performance and simple operation, it is widely used as a silicon device doping. For decades, Freeman ion sources have been successfully used in many aspects of ion implanters, including the routine production of multiple metal ion beams with beam currents in milliamp order. This article will discuss in detail ion beam generation method, the filament lamp life and the latest research progress of the ion source and the future are also introduced respectively.