论文部分内容阅读
在最近几年里,由于材料系统的革新和亚微米光刻的进展,使低噪声晶体管取得了振奋人心的进步。0.1μm栅长的成比例的GaAsMESFET,在1986年显示出80GHz的非本征f_T,而最近刚为115GHz,这个结果完全可以与相同栅长的AlGaAs-GaAsHEMT相匹敌。AlGaAs-InGaAs赝配HEMT是大有希望的器件,因为在这种结构中,薄层电荷密度提高,且能够实现电荷控制。沟道中In克分子数为0.25、栅长约为0.2μm的器件,1987年表明的非本征f_T为98GHz,而最近约为122GHz。
In recent years, exciting advances have been made in low-noise transistors due to material system innovations and advances in sub-micron lithography. A proportional GaAsMESFET with a gate length of 0.1 μm showed an extrinsic f_ 80GHz of 80 GHz in 1986, but was recently at 115 GHz, a result that could rival AlGaAs-GaAsHEMT with the same gate length. AlGaAs-InGaAs pseudomorphic HEMTs are promising devices in that the sheet charge density is increased and charge control is enabled. The channel has a device with innersquared 0.25 and a gate length of about 0.2 μm. In 1987, the extrinsic f_T was found to be 98 GHz, and more recently to about 122 GHz.