论文部分内容阅读
对于I~2Lnpn晶体管来说,介绍了允许将基极电流分成不同成分的方法:在氧气化层和金属复盖的Fp区中电子的复合电流,在高掺杂n~+发射区中空穴复合电流以及流到P型衬底的空穴漏电流。在固定发射极—基极电压时对不同几何形状的IL器件基极电流进行了比较。讨论了几种预防寄生效应的措施。在540～650ml的发射极—基极电压范围内进行了测量,不同的基极电流密度被表示为外加的发射极—基极电压的一个函数。对所测得的电流密度推导出数学表达式并与理论相比较。文章指出为了解释实验值和理论值之间的差异,器件处于重掺杂范围时应考虑到禁带宽度变窄的影响。此外,它表明实验测定的四个集电极I~2L门的基极电流与计算值能很好地相符。对这个门来说,电子复合电流仅仅是基极电流的20%,而空穴复合电流是基极电流的主要成分。
For I ~ 2Lnpn transistors, a method that allows the base current to be divided into different components is described: the recombination current of the electrons in the oxygen-gas layer and the metal-covered Fp region, hole recombination in highly doped n ~ + emitter regions Current and hole leakage current to the P-type substrate. The base current of IL devices with different geometries was compared at fixed emitter-base voltages. Several measures to prevent parasitic effects are discussed. The measurements were made over an emitter-base voltage range of 540-650 ml. Different base current densities are expressed as a function of the applied emitter-base voltage. A mathematical expression is derived from the measured current density and compared with the theory. The article points out that in order to explain the difference between the experimental value and the theoretical value, the effect of narrowing of the forbidden band width should be taken into account when the device is in a heavily doped range. In addition, it shows that the base currents of I ~ 2L gates of the four collectors tested experimentally agree well with the calculated values. For this gate, the electron recombination current is only 20% of the base current, and the hole recombination current is the main component of the base current.