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确定了用于定量俄歇电子能谱测定所需的反灵敏度因数α_i。便于对目前锑化铟器件工艺中采用各种腐蚀和清洗方法处理后的锑化铟(111)面进行半定量俄歇分析。通过化学腐蚀清洗后表面氧化物的氩离子腐蚀时间与已知厚度的阳极氧化物氩离子腐蚀时间的对比,估算出化学腐蚀清洗后表面氧化层的厚度。我们发现,表面上碳元素在0至70％之间变化,氧化物厚度在5至100(?)间变化,表面上In/Sb原子比从0.6变至3.0,所有这些变化都与所用的腐蚀方法有关。
The anti-sensitivity factor α_i required for the quantitative Auger electron spectroscopy determination was determined. It is convenient for the semi-quantitative Auger analysis of indium antimonide (111) surface treated by various etching and cleaning methods in the process of indium antimonide device. The thickness of the surface oxide layer after chemical etching cleaning is estimated by comparing the time of argon ion etching of the surface oxide after the chemical etching with the etching time of the known thickness of the anodic oxide. We found that the surface carbon content varied from 0 to 70%, the oxide thickness varied from 5 to 100 (?), The In / Sb atomic ratio on the surface changed from 0.6 to 3.0, all of which were related to the corrosion Method related.