论文部分内容阅读
通过实验研究了闪速存储器存储单元中应力诱生漏电流(SILC)的产生机理.研究结果表明,在低电场应力下,其可靠性问题主要是由载流子在氧化层里充放电引起,而在高电场下,陷阱和正电荷辅助的隧穿效应导致浮栅电荷变化是引起闪速存储器失效的主要原因.分别计算了高场应力和低场应力两种情况下SILC中的稳态电流和瞬态电流的大小.
The mechanism of stress induced leakage current (SILC) in flash memory cell is studied experimentally.The results show that the reliability of SILC is mainly caused by the carrier charge and discharge in the oxide layer under low electric field stress, However, under high electric field, the trap charge and the tunneling effect of positive charge contribute to the change of the floating gate charge, which is the main reason for the failure of flash memory. The steady-state current in SILC and the low field stress The size of the transient current.