H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC

• 作 者: 韩驿 李炳生 王志光 彭金鑫 孙建荣 魏孔芳 姚存峰 高宁 高星 庞立龙 朱亚滨 申铁龙 常海龙 崔明焕 骆鹏 盛彦斌 张宏鹏 方雪松 赵四祥 金锦 黄玉璇 刘超 王栋 何文豪 邓天虞 台鹏飞 马志伟
• 机 构: Institute of Modern Physics, Chinese Academy of Sciences,University of Chinese Academy of Sciences,S
• 出 处: Chinese Physics Letters
• 发表日期: 2017年01期
• 关键词: irradiation implanted phonon implantation annealing irradiated defects Annealing

Radiation-induced defect annealing in He~+ ion-implanted 4 H-SiC via H~+ ion irradiation is investigated by Raman spectroscopy. There are 4 H-SiC wafers irradiated with 230 keV He~+ ions with fluences ranging from 5.0×10~(15) cm~(-2)to 2.0×10~(16) cm~(-2) at room temperature. The post-implantation samples are irradiated by 260 keV H~+ ions at a fluence of 5.0×10~(15) cm~(-2) at room temperature. The intensities of Raman lines decrease after He implantation,while they increase after H irradiation. The experimental results present that the magnitude of Raman line increment is related to the concentration of pre-existing defects formed by He implantation. A strong new peak located near 966 cm~(-1), which is assigned to 3 C-SiC LO(Γ) phonon, is found in the He-implanted sample with a fluence of 5.0×10~(15) cm~(-2) followed by H irradiation. However, for the He-implanted sample with a fluence of2.0×10~(16) cm~(-2) followed by H irradiation, no 3 C-SiC phonon vibrations are found. The detailed reason for H irradiation-induced phase transformation in the He-implanted 4 H-SiC is discussed.

Radiation-induced defect annealing in He ~ + ion-implanted 4 H-SiC via H ~ + ion irradiation is investigated by Raman spectroscopy. There are 4 H-SiC wafers irradiated with 230 keV He ~ + ions with fluences ranging from 5.0 × 10 ~ (15) cm ~ (-2) to 2.0 × 10 ~ (16) cm ~ (-2) at room temperature. The post-implantation samples were irradiated by 260 keV H ~ + ions at a fluence of 5.0 × 10 ~ (15) cm -2 at room temperature. The intensities of Raman lines decrease after He implantation, while they increase after H irradiation. The experimental results present that the magnitude of Raman line increment is related to the concentration of pre-existing A strong new peak located near 966 cm -1, which is assigned to 3 C-SiC LO (Γ) phonon, is found in the He-implanted sample with a fluence of 5.0 × 10 ~ (15) cm ~ (-2) followed by H irradiation. However, for the He-implanted sample with a fluence of 2.0 × 10 ~ (16) cm -2 followed by H irradiation, no 3 C-SiC phonon vibrations are found Detailed reason for H irradiation-induced phase transformation in the He-implanted 4 H-SiC is discussed.