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用脉冲激光沉积法(PLD)在n型硅(111)平面上生长ZnO薄膜。X射线衍射(XRD)在2θ=34°处出现了唯一的衍射峰,半高宽为0.75°;傅里叶红外吸收(FTIR)在414.92cm-1附近出现了对应Zn—O键的红外光谱的特征吸收峰;光致发光(PL)测量发现了位于370和460nm处的室温光致发光峰;扫描电子显微镜(SEM)和选区电子衍射(SAED)显示了薄膜的表面形貌以及晶格结构。利用PLD法制备了具有c轴取向高度一致的六方纤锌矿结构ZnO薄膜。
ZnO thin films were grown on n-type silicon (111) plane by pulsed laser deposition (PLD). X-ray diffraction (XRD) showed a unique diffraction peak at 2θ = 34 ° with a full width at half-maximum (FWHM) of 0.75 °. The FTIR spectrum near 414.92 cm-1 showed an infrared spectrum corresponding to the Zn-O bond ; Photoluminescence (PL) measurements revealed room temperature photoluminescence peaks at 370 and 460 nm; scanning electron microscopy (SEM) and selected area electron diffraction (SAED) showed the surface morphology of the films as well as the lattice structure . The hexagonal wurtzite ZnO thin films with the same c-axis orientation are prepared by PLD.