论文部分内容阅读
本文采用了简单的电路结构,并运用单向化设计技术完成了共发射极电路设计计算。为提高放大器的集成性,增加可靠性,做了用电阻直接馈电及采用高频损耗小的间隙电容的尝试工作。放大器设计的准则是:让频带高端共轭匹配,控制频带低端失配量,以求获得带内平坦幅频特性。本着这样的准则,初步试制了2～4千兆赫倍频程微波集成晶体管放大器。放大器单级增益为5.1分贝(最小),双级增益10分贝(最小)。放大器噪声系数4千兆赫下测量为5.8分贝,3千兆赫下测量为3.9分贝,2.4千兆赫下测量为5分贝。通带起伏±1分贝,输入、输出采用L_8密封接头,驻波比小于1.9。
In this paper, a simple circuit structure, and the use of unidirectional design techniques to complete a total emitter circuit design and calculation. In order to improve the integration of the amplifier and increase the reliability, an attempt was made to directly feed the resistor and use a gap capacitor with a high frequency loss. Amplifier design criteria are: Let the high-end conjugate band, control the low-end mismatch band, in order to get the band flat amplitude-frequency characteristics. In line with this principle, the initial trial of the 2 ~ 4 GHz octave microwave integrated transistor amplifier. Amplifier single-stage gain of 5.1 dB (minimum), two-stage gain of 10 dB (minimum). The amplifier noise figure is measured at 5.8 GHz at 4 GHz, 3.9 dB at 3 GHz and 5 dB at 2.4 GHz. Passband fluctuation ± 1 dB, input and output sealed with L_8, VSWR less than 1.9.