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当前红外探测器的许多研究工作是致力于改进单元器件和大规模电子扫描列阵器件的性能;致力于获得较高的探测器工作温度。研究工作的另一个重要目标是促使这些红外探测器价格更便宜,使用更方便。本文提出了窄禁带半导体光电二极管性能的调研情况,讨论了各种红外光电二极管技术的最新进展,这些器件是:HgCdTe光电二极管、Insb光电二极管、可替代HgCdTe的由Ⅲ-Ⅴ族和Ⅱ-Ⅵ族元素组成的三元合金光电二极管,以及单片硫化铅一类的光电二极管。调查了这些光电二极管的性能,它们的工作波段包括:短波红外(SWIR):1μm～3μm;中波红外(MWIR):3μm～5μm;长波红外(LWIR):8μm～14 μm。 与其它类型的光子探测器相比;HgCdTe探测器的工作温度较高。在中波红外区域,HgCdTe探测器使用热电致冷器工作,器件性能可达到背景限水平;而长波 HgCdTe红外探测器则需要工作在大约 100 K的温度。与其它探测器比较起来,HgCdTe探测器的特点是吸收系数和量子效率都较高,而热产生速率则相对较低。
Much of the current research work on infrared detectors is devoted to improving the performance of both unitary and large-scale electronic scanning array devices; they are committed to achieving higher probe operating temperatures. Another important goal of research is to make these infrared detectors cheaper and easier to use. In this paper, the investigation of the properties of narrow bandgap semiconductor photodiodes is reviewed. The latest developments of various infrared photodiodes are discussed. These devices are: HgCdTe photodiodes, Insb photodiodes, Ⅵ group of elements composed of ternary alloy photodiode, and a single type of lead sulfide photodiode. The performance of these photodiodes has been investigated. Their operating bands include: SWIR: 1μm ~ 3μm; MWIR: 3μm ~ 5μm; LWIR: 8μm ~ 14μm. HgCdTe detectors operate at higher temperatures than other types of photon detectors. In the mid-wave infrared region, the HgCdTe detector operates with a thermoelectric cooler and the device performance can reach the background level, while the long-wave HgCdTe infrared detector needs to operate at a temperature of about 100K. Compared with other detectors, HgCdTe detectors are characterized by high absorption coefficient and quantum efficiency, while the heat generation rate is relatively low.