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研究了在不同HF浓度下用电化学方法生成的非简并P型多孔硅的光致发光谱,发现多孔硅荧光谱的峰值能量随HF浓度的变化是“台阶”式的非连续跃变。我们用多孔硅量子线的限制效应并结合多孔硅的形成机制解释了这种“台阶”现象、分析表明,“台阶”现象反映了量子限制效应在多孔硅荧光和形成过程中必然存在的量子化行为。
The photoluminescence (PL) spectra of non-degenerate P-type porous silicon electrochemically grown at different HF concentrations were studied. It was found that the peak energy of the porous silicon fluorescence spectrum was a “stepwise” discontinuous transition with HF concentration. We explain this “step” phenomenon by the confinement effect of porous silicon quantum wires and the formation mechanism of porous silicon. The analysis shows that the “step” phenomenon reflects the quantization of the quantum confinement effect in the process of fluorescence and formation of porous silicon behavior.