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锑化铟(In Sb)是Ⅲ—V族金属间化合物半导体,它具有窄禁带宽度和高迁移率。在300°K时,禁带宽度为0.17eV(长波限约7 μm),电子迁移年约为7 × 10~4cmm~2/V·s;在77°K时,禁带度度为0.23ev(长波限为5.5μm),电子迁移率的6 × 10~5cm~2/V.s。所以在红外波段有较高的灵敏度,是一种适宜制作快速中远红外光电探测器、霍尔器件和磁阻元件的好材料。近年来用这种材料制备的红外光电探测器已在红外跟踪系统、红外照相机、红外热像仪、自动控制器、气体分析仪和红外测温仪等方面广泛应用。本文报道的是在室温下工作于2～7μm的InSb光导型红外探测器的制各、性能和用途,并给出了浸没型探测器的性能指标。
In Sb is a group III-V intermetallic compound semiconductor that has a narrow bandgap and high mobility. At 300 ° K, the forbidden band width is 0.17eV (long-wave limit is about 7 μm) and the electron transfer is about 7 × 10 ~ 4cmm ~ 2 / V · s. At 77 ° K, the forbidden band is 0.23ev (Long-wave limit of 5.5μm), electron mobility of 6 × 10 ~ 5cm ~ 2 / Vs. So in the infrared band has a higher sensitivity, is a suitable for the production of fast COSCO infrared detectors, Hall devices and magnetoresistive elements of good materials. In recent years, infrared photodetectors made of this material have been widely used in infrared tracking systems, infrared cameras, infrared cameras, automatic controllers, gas analyzers and infrared thermometers. This paper reports the fabrication, performance and application of InSb photoconductive infrared detectors operating at 2 ~ 7μm at room temperature, and gives the performance indexes of the immersed detectors.