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选用n-，p-和p+三种半导体硅材料作为衬底，通过电化学腐蚀方法分别形成PS薄膜；在PS／S膜上再淀积一层具有一定图形的铝金属膜并焊接引线，形成了M－PS－S二极管结构；在外加直流偏置电压下分别测量它们的V－I特性，得出了不同的V－I特性曲线；V-I特性都具有整流效应．根据对所得特性的理论分析．论述了材料、工艺和结构等因素对M－PS－S特性的影响．并提出了优化设计的方法，以改善M－PS－S结构的特性，实现其在发光、敏感等方面的应用。
Select n -, p - and p + three kinds of semiconductor silicon material as the substrate, respectively, by electrochemical etching method to form a PS film; in the PS / S film and then deposit a layer of a certain pattern of aluminum metal film and welding leads to form The structure of M-PS-S diodes were measured. Their V-I characteristics were measured under the applied DC bias voltage, and different V-I characteristic curves were obtained. The VI characteristics all have the rectifying effect. According to the theoretical analysis of the resulting characteristics. The effects of material, process and structure on the properties of M-PS-S were discussed. And put forward the method of optimizing the design, in order to improve the characteristic of M-PS-S structure, realize its application in light-emitting, sensitive and so on.