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In this study,the role of the pulse duty ratio was investigated during the depositionof diamond films in a hot filament chemical vapour deposition reactor with a pulsed-dc biasedsubstrate positively relative to the hot filaments.The voltage-current characteristics showed thatthe discharge current rose with the increase of biasing voltage,which was modified by the dutyratio.Before deposition,two approaches were adopted for the pre-treatment of the silicon sub-strates,respectively,and the substrates were scratched by diamond paste or seeded by diamondpowders using the so-called ’soft dry polished’ technique.Diamond films were deposited under afixed discharge power by changing the duty ratios.In the first group with scratched substrates,it was found that under a high duty ratio the diamond grew slowly with quite poor nucleation,while in the second case a high duty ratio induced a high deposition rate and good diamond qual-ity.Reactive hydrocarbon species with high energy are essential for the initial nucleation process,which is more effectively achieved at a high biasing voltage in the condition of a low duty ratio.Inthe film growth process,the large discharge current at a high duty ratio represents an increasedconcentration of electrons and reactive species as well,promoting the growth of diamond films.
In this study, the role of the pulse duty ratio was investigating the role of the deposition rate of diamond filaments. 的 中文 解释 _pressure deposition reactor with a pulsed-dc biased by substituting relative to the hot filaments. Voltage-current characteristics showed that the discharge current rose with the increase of biasing voltage, which was modified by the duty rate. which was modified by the duty protocol. two deposition were adopted for the pre-treatment of the silicon sub-strates, respectively, and the substrates were scratched by diamond paste or seeded by diamond partners using the so- called ’soft dry polished’ technique. Diamond films were deposited under afixed discharge power by changing the duty ratio. In the first group with scratched substrates, it was found that under a high duty ratio the diamond grew slowly with quite poor nucleation, while in the second case a high duty ratio induced a high deposition rate and good diamond qual-ity. Reactive hydrocarbon species with high energy are essential for the initial nucleation process, which is more efficient achieved at a high biasing voltage in the condition of a low duty ratio. Inthe film growth process, the large discharge current at a high duty ratio represents an increasedconcentration of electrons and reactive species as well, promoting the growth of diamond films.