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一、概述 MOS场效应晶体管因具有高输入阻抗特性而在弱电流测量领域中得到广泛应用。目前国内厂家批量生产的MOS场效应晶体管输入阻抗在10~9—10~(12)Ω范围,在实验室条件下,国内已有做到10~(16)Ω以上的,在国外,采用了诸如保护环境等类的措施以后,这种管子的输入阻抗己有提高到10~(18)Ω的量级的。如何进一步提高MOS场效应管的输入阻抗,对于进一步扩大弱电流测量范围,简化弱电流测量电路,以及研制和生产更可靠更轻便的弱电流测量装置有直接关系。1977
First, an overview MOS field effect transistor has a wide range of applications in the field of weak current measurement due to its high input impedance characteristics. At present, the input impedance of MOS field effect transistors mass-produced by domestic manufacturers is in the range of 10 ~ 9-10 ~ (12) Ω. Under laboratory conditions, the input impedance of MOS field-effect transistors has reached 10 ~ (16) Ω or more in China. Such as the protection of the environment and other measures later, the tube’s input impedance has been increased to the order of 10 ~ (18) Ω. How to further improve the input impedance of a MOS FET is directly related to further expanding the measurement range of a weak current, simplifying a weak current measurement circuit, and developing and manufacturing a more reliable and lighter weak current measurement device. 1977