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欧洲研究机构IMEC与其合作伙伴最近成功在200 mm规格硅衬底上制造出了高质量的GaN/AlGaN异质结构层,双方目前正合作研究基于氮化镓材料的HEMT(High electron mobility transistor:高电子迁移率晶体管)异质结构晶体管技术。这次成功在200 mm硅衬底上制出高质量GaN HEMT,标志着在将功率器件引入200 mm规格芯片厂进行高效率生产方面取得了里程碑式的成就。(过去此类器件一般是在红宝石衬底上制成的。)
European research institute IMEC and its partners recently succeeded in producing a high-quality GaN / AlGaN heterostructure layer on a 200-mm-size silicon substrate, and are currently collaborating on high-electron-mobility transistor (HEMT) Electron Mobility Transistor) Heterostructure Transistor Technology. The successful production of high quality GaN HEMTs on 200 mm silicon substrates marks a milestone in the introduction of power devices into 200 mm-format fabs for efficient production. (In the past such devices were typically made on ruby substrates.)