A novel double-trench LVTSCR used in the ESD protection of a RFIC

• 作 者: 李立 刘红侠
• 机 构: Key Laboratory of the Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,Sc
• 出 处: 半导体学报
• 发表日期: 2011年10期
• 关键词: trench RFIC anode rectifier adjustment triggering breakdown parasitic micron tra

A low-voltage triggering silicon-controlled rectifier(LVTSCR),for its high efficiency and low parasitic parameters,has many advantages in ESD protection,especially in ultra-deep sub-micron(UDSM) IC and high frequency applications.In this paper,the impact factors of the snapback characteristics of a LVTSCR and the configuring modes are analyzed and evaluated in detail.These parameters include anode series resistance,gate voltage,structure and size of devices.In addition,a double-trench LVTSCR is presented that can increase the hold-on voltage effectively and offers easy adjustment.Also,its snapback characteristics can obey the ESD design window rule very well.The strategy of ESD protection in a RFIC using a LVTSCR is discussed at the end of the paper.

A low-voltage triggering silicon-controlled rectifier (LVTSCR), for its high efficiency and low parasitic parameters, has many advantages in ESD protection, especially in ultra-deep sub-micron (UDSM) IC and high frequency applications. In this paper, the impact factors of the snapback characteristics of a LVTSCR and the configuring modes are analyzed and evaluated in detail. These parameters include anode series resistance, gate voltage, structure and size of devices. In addition, a double-trench LVTSCR is presented that can increase the hold-on voltage effectively and offers easy adjustment. Also, its snapback characteristics can obey the ESD design window rule very well. The strategy of ESD protection in a RFIC using a LVTSCR is discussed at the end of the paper.