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采用电子束沉积的方法在底衬Mo(Rq≈5~8.63nm)上制备了厚度为2~3μm的Sc膜,再将Sc膜在Sievert真空系统中进行吸氘。结果表明:在底衬温度为623,823,1023K时,Sc膜呈现出柱状结构,且具有(002)的择优生长;随着沉积温度从623K增大到1023K,Sc膜的(002)择优生长变强,晶粒尺寸也随之增大,这与前人报道的结构区域模型(SZMs)是一致的。Sc膜经吸氘变为了ScD2膜,ScD2膜为(111)择优生长,而且随着衬底温度的升高,择优生长也随着增强,这说明了(111)晶面的ScD2晶核是由吸氘前(002)晶面的钪晶核生长而来的;高底衬温度下制备的Sc膜经吸氘后所获的ScD2膜的晶粒尺寸反而更小,这可能是由D原子在低衬底温度制备的Sc膜中较强的扩散动力学造成的。另外,提出了一种新的制备底衬材料的方法,该方法能够简单、快速的获得Sc膜的断面形貌,而且对Sc膜不会造成任何污染,且经济便宜。
The Sc film with the thickness of 2 ~ 3μm was prepared on the underlayer Mo (Rq≈5 ~ 8.63nm) by electron beam deposition, and then the Sc film was sucked and deuterium in the Sievert vacuum system. The results show that when the substrate temperature is 623, 823 and 1023 K, the Sc film shows a columnar structure and has a (002) preferred growth. The (002) preferential growth of the Sc film becomes stronger as the deposition temperature increases from 623 K to 1023 K , The grain size also increases, which is consistent with the previously reported structural area model (SZMs). The Sc membrane became ScD2 membrane via superoxide dismutation, and the (111) preferential growth of ScD2 membrane was observed. With the increase of substrate temperature, the preferential growth also increased, which indicated that the ScD2 nucleus of (111) (002) before deuterium dendrite scrystallization nuclei from the growth; Sc substrate membrane prepared under high substrate temperature after deuterium absorption obtained ScD2 film grain size smaller but probably by the D atom in Strong diffusion kinetics of Sc membrane prepared by low substrate temperature. In addition, a new method for preparing a backing material is proposed, which can obtain the cross-sectional morphology of the Sc film easily and rapidly without any pollution to the Sc film and is economical and economical.