Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel

• 作 者: Hayao Kasai Takuya Oikawa Tomo
• 机 构: DepartmentofElectricalandElectronicsEngineering
• 出 处: 材料科学与化学工程(英文)
• 发表日期: 2017年1期
• 关键词: GAN MISFET Mg Ion IMPLANTATION THRESHOLD VOLTAGE GaNMISFETMg Ion ImplantationThr

This paper demonstrates that threshold voltages of GaN MISFET are controlla-ble by varying the Mg ion doses for Mg ion implantation. Furthermore, it de-monstrates for the first time that the short channel effect can be suppressed using a halo structure th