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用调制光谱的方法对分子束外延（ＭＢＥ）生长在ＧａＡｓ（１００）衬底上的一组超薄层本征型ＡｌｘＧａ１－ｘＡｓ层进行了原位的研究．对厚度在３５ｎｍ以下的一组样品观察到了若干个跃迁峰，而对厚度在１００ｎｍ的样品只观察到了一个跃迁峰．观察到的各峰随厚度的改变而变化．用台阶势模型很好地解释了实验结果
A set of ultrathin layer intrinsic-type AlxGa1-xAs layers grown on GaAs (100) substrates by molecular beam epitaxy (MBE) was investigated by using modulation spectroscopy. A number of transition peaks were observed for a group of samples with a thickness below 35 nm, whereas only one transition peak was observed for a sample with a thickness of 100 nm. The observed peaks vary with thickness. The step potential model is a good explanation of the experimental results