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目的:在高温等恶劣工作环境下,燃气轮机有着迫切的温度等工况参数的实时监测需求。声表面波(SAW)技术与微机电系统(MEMS)技术的结合可提供一种很有发展前景的解决方案。本文旨在探讨SAW谐振器的设计与仿真方法,研究高质量c轴择优取向的AlN压电薄膜制备工艺及与MEMS工艺兼容的SAW谐振器制作工艺,并测试其电学性能以验证SAW谐振器设计与制作的正确性与可行性。创新点:1.首次在耐高温材料AlN/4H-SiC上设计、仿真及制作SAW谐振器并测试电学性能;2.在4HSiC上得到了高质量c轴择优取向的Al N压电薄膜并开发了一套与MEMS工艺兼容的SAW谐振器制作工艺。方法:1.通过对SAW谐振器所有结构参数的设计与仿真,得到谐振器的谐振频率与反谐振频率等(图2和3);2.利用磁控溅射方法在4H-SiC衬底上溅射高质量c轴择优取向的AlN压电薄膜,再利用光刻、湿法腐蚀等MEMS工艺制作SAW谐振器(图4);3.通过扫描电镜和X射线衍射等手段,检测AlN压电薄膜质量(图5和6)及器件制作结果(图7);4.利用网络分析仪测试SAW谐振器电学性能并与仿真结果相比较,验证SAW谐振器设计仿真方法和MEMS制作工艺的可行性和有效性(图8)。结论:1.基于耐高温材料AlN/4H-SiC,成功设计并制作出SAW谐振器(尺寸:1107μm×721μm);2.在4H-SiC上得到了高质量c轴择优取向的AlN压电薄膜,衍射峰为36.10°,摇摆曲线半高宽仅1.19°;3.SAW谐振器电学性能测试结果与仿真结果一致,证明其设计仿真方法正确有效、MEMS制作工艺可行。
Purpose: Gas turbines have an urgent need for real-time monitoring of operating parameters such as temperature under harsh working conditions such as high temperatures. The combination of SAW and MEMS technology offers a promising solution. The purpose of this paper is to explore the design and simulation methods of SAW resonators, to study the preparation process of high quality c-axis preferred orientation AlN piezoelectric thin films and SAW resonators compatible with MEMS technology, and to test their electrical performance to verify the SAW resonator design And the correctness and feasibility of production. Innovative points: 1. For the first time in the high temperature material AlN / 4H-SiC design, simulation and production of SAW resonators and test the electrical performance; 2. 4HSiC obtained on the c-axis preferred orientation Al N piezoelectric film and development A set of MEMS technology compatible SAW resonator manufacturing process. Methods: 1. Through the design and simulation of all the structural parameters of the SAW resonator, the resonant frequency and anti-resonant frequency of the resonator are obtained (Figures 2 and 3); 2. The magnetron sputtering method is used on the 4H-SiC substrate Sputtering high-quality c-axis preferred AlN piezoelectric film, and then use lithography, wet etching and other MEMS fabrication SAW resonator (Figure 4); 3 by scanning electron microscopy and X-ray diffraction and other means to detect AlN piezoelectric Film quality (Figure 5 and 6) and device fabrication results (Figure 7); 4. Using the network analyzer to test the SAW resonator electrical performance and simulation results compared to verify the feasibility of SAW resonator design simulation methods and MEMS fabrication process And effectiveness (Figure 8). SAW resonator (size: 1107μm × 721μm) was successfully designed and fabricated based on the AlN / 4H-SiC material with high temperature resistance. 2. A high quality c-axis preferred AlN piezoelectric film was obtained on 4H-SiC , The diffraction peak is 36.10 °, the FWHM is only 1.19 °; 3. The electrical performance of the SAW resonator is consistent with the simulation results, which proves that the design simulation method is correct and effective, MEMS fabrication process is feasible.