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采用辉光放电等离子体聚合方法 ,以 C2 H4 和 NH3 为单体 ,在 Nafion TM膜表面沉积一层含氨基及酰氨基的类聚乙烯阴离子交换膜 ,提高了 Nafion TM膜对阳离子的选择性 ,同时不显著增加膜电阻 .由 SEM确定该等离子体聚合膜厚约 0 .5μm,用红外光谱及 X光电子能谱表征膜结构 .采用四电极法测量膜电阻 ,膜对质子的选择性由 Cu2 + 的迁移数 t Cu表征 ,用二室隔膜装置 (0 .2 5mol/L Cu Cl2 -0 .5mol/L HCl|等离子体处理膜 |1 mol/L HCl)测量 t Cu. O2 等离子体预处理 Nafion TM膜有利于沉积膜在 Nafion TM膜上的沉积并与 Nafion TM膜紧密结合 .经改性后的 Nafion TM膜电阻值仍然很小 ,在 1 mol/L HCl溶液中电阻小于 0 .5Ω· cm2
Using glow discharge plasma polymerization method, C2H4 and NH3 as monomers, deposited on the surface of Nafion TM film containing amino and amido-like polyethylene anion exchange membrane to improve the Nafion TM membrane cation selectivity, While the membrane resistance was not increased significantly.The plasma membrane thickness was determined by SEM to be about0.5μm, and the membrane structure was characterized by FTIR and X-ray photoelectron spectroscopy.The membrane resistance was measured by four-electrode method.The selectivity of the membrane to proton was determined by Cu2 + T Cu. The Cu2 O2 plasma pretreatment Nafion was measured using a two-compartment membrane reactor (0.25 mol / L Cu Cl2 -0.5 mol / L HCl | plasma treated membrane | 1 mol / L HCl) TM film is conducive to deposition of Nafion film deposited on the membrane and Nafion TM membrane tightly bonded modified Nafion TM membrane resistance is still very small, in 1 mol / L HCl solution resistance is less than 0 5Ω · cm2