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薄膜表面形貌定量研究有助于薄膜生长机理的认识。研究的薄膜是用激光脉冲沉积法(PLD)制备的ZnO∶Ga(GZO)透明导电薄膜。由于GZO薄膜的生长是在远离平衡态情况下实现的,具备自仿射分形特征,可以用高度-高度相关函数进行描述。通过对用原子力显微镜(AFM)获得的表面高度数据进行相关运算,定量地分析了PLD制备的GZO薄膜的生长界面特征,求出了描述粗糙表面的高度-高度相关函数的三个重要参量W,ξ和α,发现制备的GZO薄膜生长符合Kuromoto-Sivashinsky生长模型。
Quantitative study of the surface morphology of the film contributes to the understanding of the film growth mechanism. The investigated films are ZnO: Ga (GZO) transparent conductive films prepared by laser pulse deposition (PLD). Since the growth of GZO films is far away from the equilibrium state, the self-affine fractal features can be described by the height-height correlation function. Through the correlation calculation of the surface height data obtained by atomic force microscopy (AFM), the growth interface characteristics of GZO films prepared by PLD were quantitatively analyzed. Three important parameters describing the height-height correlation function of rough surface were obtained. ξ and α, we found that the prepared GZO thin films grow in line with the Kuromoto-Sivashinsky growth model.