【摘 要】
：
With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-aligned large-area multi-finger configuration power SiGe
【机 构】
：
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of
论文部分内容阅读
With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-aligned large-area multi-finger configuration power SiGe heterojunction bipolar transistor (HBT) device (with an emitter area of about 880μm2) is fabricated with 2μm double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVCEO is 10V and the collector-base junction breakdown voltage BVcBo is 16 V with collector doping concentration of 1 × 1017 cm-3 and thickness of 400nm. The device exhibited a maximum oscillation frequency fmax of 35.5 GHz and a cut-off frequency fT of 24.9 GHz at a dc bias point of Ic = 70 mA and the voltage between collector and emitter is VCE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from 0dBm to 21 dBm.A maximum output power of 29.9dBm (about 977mW) is obtained at an input power of 18.5dBm with a gain of 11.47dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, fmax and fT are improved by about 83.9% and 38.3%, respectively.
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